DocumentCode :
608279
Title :
Investigation of data retention window closure on logic embedded non-volatile memory
Author :
Liao, Y.Y. ; Tsai, L.Y. ; Leu, L.Y. ; Lee, Young-Hyun ; Wang, W. ; Wu, Kaijie
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
fYear :
2013
fDate :
14-18 April 2013
Abstract :
Two mechanisms of data retention (DR) are investigated on logic embedded non-volatile memory (eNVM) in Multiple-Time-Programming (MTP) application. Unlike the typically observed DR degradation after endurance test in flash memory, DR window closure of logic eNVM can be recovered at higher data retention bake temperature and longer bake time due to thermally activated electron de-trapping from interface of tunnel oxide to Si substrate. In addition, a new DR degradation mechanism called Reverse Code Effect (RCE) is shown to exhibit faster DR degradation than the original DR behaviors. RCE induced DR degradation can be attributed to the combined effect of capacitive coupling [1] in between floating gate (FG) and contact-etch-stop-layer (CESL) dipole charges and charge loss due to charge recombination in FG. We also demonstrate that RCE can be effectively suppressed by adopting low-level Si-H compositions of CESL nitride film with less dipole charges to reduce the charge loss in the FG.
Keywords :
flash memories; logic circuits; random-access storage; tunnelling; CESL nitride film; MTP application; RCE; Si; Si substrate; bake time; capacitive coupling; charge recombination; contact-etch-stop-layer; data retention bake temperature; data retention window closure; dipole charges; electron de-trapping; flash memory; floating gate; logic eNVM; logic embedded nonvolatile memory; low-level Si-H compositions; multiple-time-programming; reverse code effect; tunnel oxide; Couplings; Degradation; Films; Logic gates; Market research; Nonvolatile memory; Reliability; Mult-Time-Programming; contact-etch-stop-layer; data retention; floationg gate; non-volatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6532098
Filename :
6532098
Link To Document :
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