A comprehensive AC / DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence

Author

Desai, Shaishav ; Mukhopadhyay, Saibal ; Goel, Nishith ; Nanaware, N. ; Jose, B. ; Joshi, Kishor ; Mahapatra, Santanu

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India

fYear

2013

fDate

14-18 April 2013

Abstract

A comprehensive NBTI framework using the H/H₂ RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments. The framework is validated against experimental data from different DC stress and recovery conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG devices having different gate insulator processes. Limitations of the alternative 2 stage model framework is discussed.

Keywords

hole traps; interface states; negative bias temperature instability; power MOSFET; semiconductor device models; AC frequency; DC stress; H/H₂ RD model; HKMG device; SiON; comprehensive AC/DC NBTI model; duty cycle; gate insulator process; hole trap; interface trap; measurement speed; process dependence; recovery condition; Charge carrier processes; Correlation; Data models; Logic gates; Mathematical model; Predictive models; Stress; 2 stage model; AC duty cycle; AC frequency; DC stress; NBTI; NBTI process dependence; RD model; Two Energy Well model; recovery; trap generation; trapping;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532117

Filename

6532117