A test structure and spectroscopic method for monitoring interface traps

Author

Chao Wei ; Yandong He ; Gang Du ; Ganggang Zhang ; Xing Zhang

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

fYear

2013

fDate

14-18 April 2013

Abstract

A new test structure and spectroscopic characterization method for monitoring interface traps in MOSFETs is proposed, which can be used to directly evaluate the interface traps on both n- and p-type Si/SiO₂ interfaces through one-time direct current IV measurement. Based on the structure design and testing setup, a two-peak spectrum can be obtained. The properties of interface traps on both n- and p-type Si/SiO₂ interfaces can be distinguished by the peak height and position. Some effects on the spectroscopic method by the test structure design parameters have been studied systematically. Its application in reliability research was demonstrated.

Keywords

MOSFET; elemental semiconductors; interface states; silicon compounds; MOSFET; Si-SiO₂; direct current IV measurement; interface traps; n-type Si/SiO₂ interface; p-type Si/SiO₂ interface; peak height; peak position; spectroscopic characterization method; test structure; two-peak spectrum; Integrated circuit reliability; Logic gates; MOSFET; Monitoring; Silicon; Substrates; DCIV; interface traps; test structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532121

Filename

6532121