Interaction between BTI and HCI degradation in High-K devices

Author

Federspiel, Xavier ; Rafik, M. ; Angot, D. ; Cacho, F. ; Roy, Didier

Author_Institution

Crolles 2 R&D Center, STMicroelectronic, Monnet, France

fYear

2013

fDate

14-18 April 2013

Abstract

In this paper we review experiments combining several types of FET devices degradation modes, including HCI, bias and unbiased BTI. We analyze the nature and localization of defect issued from these degradation processes and derive rules governing interaction between defect generation process, drain polarization dependency on BTI degradation as well as potential BTI contribution to HCI degradation. Consequences of BTI - HCI interaction on WLR analysis as well as product operation will be discussed.

Keywords

field effect transistors; high-k dielectric thin films; hot carriers; negative bias temperature instability; semiconductor device reliability; BTI - HCI interaction; BTI degradation; FET device degradation mode; NBTI; WLR analysis; defect generation process; defect localization; degradation process; drain polarization dependency; high-k device; hot carrier; unbiased BTI; Analytical models; Correlation; Degradation; Human computer interaction; Integrated circuit modeling; Mathematical model; Stress; NBTI; device; hot carrier; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532124

Filename

6532124