Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Author

Fox, Alexander ; Heinemann, Bernd ; Rucker, Holger ; Barth, Rainer ; Fischer, Gerhard G. ; Wipf, Christian ; Marschmeyer, Steffen ; Aufinger, Klaus ; Bock, Josef ; Boguth, Sabine ; Knapp, Herbert ; Lachner, Rudolf ; Liebl, Wolfgang ; Manger, Dirk ; Meiste

Author_Institution

Innovations for High Performance Microelectron., Frankfurt, Germany

Volume

36

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

642

Lastpage

644

Abstract

The high-frequency performance of a novel SiGe heterojunction bipolar transistor (HBT) module with monocrystalline base link is investigated in an industrial 0.13-μm BiCMOS environment. The main feature of this new HBT module is a significant reduction of the external base resistance as shown here by direct comparison with a conventional double-poly-silicon technology. Peak f_T/f_max values of 300/500 GHz are achieved. A minimum current-mode logic ring oscillator gate delay of 1.8 ps and a record operation frequency for a SiGe static frequency divider of 161 GHz are demonstrated.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; frequency dividers; heterojunction bipolar transistors; HBT module; SiGe; advanced heterojunction bipolar transistor; double-poly-silicon technology; external base resistance reduction; frequency 161 GHz; frequency 300 GHz; frequency 500 GHz; half-THz BiCMOS technology; high-frequency performance; minimum current-mode logic ring oscillator gate delay; monocrystalline base link; record operation frequency; size 0.13 mum; static frequency divider; time 1.8 ps; BiCMOS integrated circuits; Delays; Epitaxial growth; Heterojunction bipolar transistors; Logic gates; Silicon germanium; Heterojunction bipolar transistors (HBTs); high-speed devices; ring oscillators; silicon-germanium (SiGe);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2432130

Filename

7105854