Title :
Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology
Author :
Fox, Alexander ; Heinemann, Bernd ; Rucker, Holger ; Barth, Rainer ; Fischer, Gerhard G. ; Wipf, Christian ; Marschmeyer, Steffen ; Aufinger, Klaus ; Bock, Josef ; Boguth, Sabine ; Knapp, Herbert ; Lachner, Rudolf ; Liebl, Wolfgang ; Manger, Dirk ; Meiste
Author_Institution :
Innovations for High Performance Microelectron., Frankfurt, Germany
Abstract :
The high-frequency performance of a novel SiGe heterojunction bipolar transistor (HBT) module with monocrystalline base link is investigated in an industrial 0.13-μm BiCMOS environment. The main feature of this new HBT module is a significant reduction of the external base resistance as shown here by direct comparison with a conventional double-poly-silicon technology. Peak fT/fmax values of 300/500 GHz are achieved. A minimum current-mode logic ring oscillator gate delay of 1.8 ps and a record operation frequency for a SiGe static frequency divider of 161 GHz are demonstrated.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; frequency dividers; heterojunction bipolar transistors; HBT module; SiGe; advanced heterojunction bipolar transistor; double-poly-silicon technology; external base resistance reduction; frequency 161 GHz; frequency 300 GHz; frequency 500 GHz; half-THz BiCMOS technology; high-frequency performance; minimum current-mode logic ring oscillator gate delay; monocrystalline base link; record operation frequency; size 0.13 mum; static frequency divider; time 1.8 ps; BiCMOS integrated circuits; Delays; Epitaxial growth; Heterojunction bipolar transistors; Logic gates; Silicon germanium; Heterojunction bipolar transistors (HBTs); high-speed devices; ring oscillators; silicon-germanium (SiGe);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2432130
