• DocumentCode
    608625
  • Title

    Monolithically integrated silicon nanophotonics receiver in 90nm CMOS technology node

  • Author

    Assefa, Solomon ; Huapu Pan ; Shank, S. ; Green, William M. J. ; Rylyakov, A. ; Schow, Clint ; Khater, M. ; Kamlapurkar, Swetha ; Kiewra, Edward ; Reinholm, Carol ; Topuria, Teya ; Rice, P. ; Baks, Christian ; Vlasov, Yurii

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2013
  • fDate
    17-21 March 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A monolithically-integrated germanium receiver is fabricated in the IBM´s newly established 90nm CMOS-integrated nanophotonics technology node. Technology is promising for cost-effective 10Gbps to 28Gbps optical communications links operating within extended temperature range up to 95°C.
  • Keywords
    CMOS integrated circuits; nanophotonics; optical links; optical receivers; silicon; CMOS technology node; CMOS-integrated nanophotonics technology; monolithically integrated silicon nanophotonics receiver; monolithically-integrated germanium receiver; optical communications links; size 90 nm; Optical fiber communication; Receivers; Sensitivity; Temperature distribution; Temperature measurement; Temperature sensors; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-4799-0457-0
  • Type

    conf

  • Filename
    6532765