DocumentCode :
608625
Title :
Monolithically integrated silicon nanophotonics receiver in 90nm CMOS technology node
Author :
Assefa, Solomon ; Huapu Pan ; Shank, S. ; Green, William M. J. ; Rylyakov, A. ; Schow, Clint ; Khater, M. ; Kamlapurkar, Swetha ; Kiewra, Edward ; Reinholm, Carol ; Topuria, Teya ; Rice, P. ; Baks, Christian ; Vlasov, Yurii
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2013
fDate :
17-21 March 2013
Firstpage :
1
Lastpage :
3
Abstract :
A monolithically-integrated germanium receiver is fabricated in the IBM´s newly established 90nm CMOS-integrated nanophotonics technology node. Technology is promising for cost-effective 10Gbps to 28Gbps optical communications links operating within extended temperature range up to 95°C.
Keywords :
CMOS integrated circuits; nanophotonics; optical links; optical receivers; silicon; CMOS technology node; CMOS-integrated nanophotonics technology; monolithically integrated silicon nanophotonics receiver; monolithically-integrated germanium receiver; optical communications links; size 90 nm; Optical fiber communication; Receivers; Sensitivity; Temperature distribution; Temperature measurement; Temperature sensors; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0457-0
Type :
conf
Filename :
6532765
Link To Document :
بازگشت