Title :
28-Gb/s directly modulated InGaAlAs ACPM DFB lasers with high mask margin of 22% at 55°C
Author :
Nakahara, Kouji ; Wakayama, Yuki ; Hiruma, Kazuo ; Kitatani, Takeshi ; Shinoda, Kazuma ; Fukamachi, Toshihiko ; Sakuma, Yasushi ; Tanaka, Shoji
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
A 1.3-μm directly modulated InGaAlAs-MQW DFB laser, incorporating an asymmetric corrugation-pitch-modulated (ACPM) grating, operating at 28 Gb/s at 55°C experimentally demonstrated high mask margin of 22% for the first time.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; InGaAlAs; asymmetric corrugation-pitch-modulated grating; bit rate 28 Gbit/s; size 1.3 mum; temperature 55 degC; Gratings; Measurement by laser beam; Optical device fabrication; Optical variables measurement; Power lasers; Surface emitting lasers;
Conference_Titel :
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0457-0
