• DocumentCode
    609492
  • Title

    BAW pressure sensor on LiNbO3 membrane lapping

  • Author

    Baron, T. ; Masson, Jean-Francois ; Romand, J.P. ; Alzuaga, Sebastien ; Catherinot, L. ; Chatras, Matthieu ; Ballandras, S.

  • Author_Institution
    FEMTO-ST, ENSMM, Besancon, France
  • fYear
    2010
  • fDate
    13-16 April 2010
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    In this paper, we have proposed a new concept for pressure and more generally stress sensors exploiting single-crystal based HBAR. After describing the operation principle, the practical feasibility of the sensor has been shown, yielding electrical results allowing a first characterization of such sensor sensitivity. The process flow is generic and allows us to develop different devices such as HBAR or SAW sensors with the freedom of choosing material in function of the design requirements. Although the first reported results can not exploit the high quality resonance of such HBARs, more effort will be performed in the next future to definitely validate the approach and the corresponding stress sensitivity.
  • Keywords
    acoustic resonators; bulk acoustic wave devices; lapping (machining); lithium compounds; pressure sensors; BAW pressure sensor; LiNbO3; high quality resonance; membrane lapping; single crystal based HBAR; stress sensitivity; stress sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    EFTF-2010 24th European Frequency and Time Forum
  • Conference_Location
    Noordwijk
  • Print_ISBN
    978-1-4673-5970-2
  • Type

    conf

  • DOI
    10.1109/EFTF.2010.6533644
  • Filename
    6533644