DocumentCode
609639
Title
A case study: 3-D stacked memory system architecture exploration by ESL virtual platform
Author
Hsien-Ching Hsieh ; Shr-Je Lin ; Chun-Nan Liu ; Jen-Chieh Yeh ; Shing-Wu Tung ; Ding-Ming Kwai
Author_Institution
ICL/Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2013
fDate
22-24 April 2013
Firstpage
1
Lastpage
4
Abstract
Three-dimensional (3-D) integration promises continuous systemlevel functional scaling beyond the traditional 2-D device-level geometric scaling. It allows stacking memory dies on top of a logic die using through-silicon vias (TSVs) to realize high bandwidth by deploying the vertical connections between functional blocks. In this paper, we present a design strategy using ESL virtual platform to explore 3-D memory architecture for a heterogeneous multi-core system. Based on the virtual platform, designers can rapidly obtain the 3-D stacking interface for better system performance, energy efficiency, and TSV utilization. A feasible stacking architecture and memory interface which meets the design constraints and performance requirements has been evaluated for the target system. Real multimedia H.264 decoding experiments show that the stacking system can achieve about 30% performance improvement and 20% energy saving, compared to the original 2-D system.
Keywords
integrated circuit design; memory architecture; multiprocessing systems; storage management chips; three-dimensional integrated circuits; 2D device-level geometric scaling; 2D system; 3D integration; 3D stacked memory system architecture exploration; 3D stacking interface; ESL virtual platform; TSV; continuous system- level functional scaling; functional blocks; heterogeneous multicore system; memory interface; real multimedia H.264 decoding; stacking memory dies; three-dimensional integration; through-silicon vias; Decoding; Digital signal processing; Memory architecture; Stacking; System performance; System-on-chip; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4673-4435-7
Type
conf
DOI
10.1109/VLDI-DAT.2013.6533815
Filename
6533815
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