A 55-nm, 0.86-Volt operation, 75MHz high speed, 96uA/MHz low power, wide voltage supply range 2M-bit split-gate embedded Flash

Author

Cho, C.Y.-S. ; Wang, J.C. ; Huang, Liwen ; Weng, Ming-Fang ; Lin, Y.F. ; Lee, C.F. ; Lien, C.W. ; Feng, H.C. ; Yang, Tao ; Liao, S.P. ; Wu, Jin Jei ; Chih, Y.D. ; Natarajan, Sriraam

Author_Institution

Semicond. Manuf. Co. (tsmc), Hsinchu, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

4

Abstract

Firstly an embedded 55-nm Flash design based on split-gate Flash bitcell is proposed by 32KX64 IP. It demonstrates competitive features for production by wide voltage supply range (VDD=0.86~1.32V, and VD25=1.6~3.6V), low-power read feature (96uA/MHz, 64 bits), fast wake-up time from power off (<; 2us), and fast operation read speed up to 75MHz (VDD=1.08V).

Keywords

embedded systems; flash memories; integrated circuit design; low-power electronics; embedded flash design; frequency 75 MHz; low power wide voltage supply range split-gate embedded flash memory; size 55 nm; split-gate Flash bitcell; storage capacity 2 Mbit; storage capacity 64 bit; voltage 0.86 V; voltage 1.08 V; Arrays; Capacitors; IP networks; Metals; Split gate flash memory cells; Transistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-4435-7

Type

conf

DOI

10.1109/VLDI-DAT.2013.6533877

Filename

6533877