Title :
A process-scalable RF transmitter using 90nm and 65nm Si CMOS
Author :
Shirane, A. ; Ito, H. ; Ishihara, Noboru ; Masu, Kazuya
Author_Institution :
Solutions Sci. Res. Lab. (SSRL), Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
This paper describes a process-scalable transmitter based on inverter topology excluding un-scalable RF inductors. The proposed transmitter was fabricated by using 90nm and 65nm Si CMOS process. The following results are obtained from the comparison between 90nm and 65nm of the measurement results. The area of the core circuits reduces from 0.0081mm2 to 0.0054mm2. The operational frequency improves from 6.0 GHz to 11GHz, and the power consumption decreases from 10.6 mW to 7.0 mW. These results confirm the process-scalability of the presented transmitter, and promise the further improvements with the future miniaturization.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit measurement; invertors; microwave integrated circuits; power integrated circuits; radio transmitters; silicon; CMOS process; Si; frequency 6.0 GHz to 11 GHz; inverter topology; power 10.6 mW to 7.0 mW; power consumption; process-scalable RF transmitter; size 65 nm; size 90 nm; unscalable RF inductor; Frequency measurement; Power demand; Power generation; Power measurement; Transmitters; Voltage measurement; CMOS integrated circuit; inductor-less; inverter-based; radiofrequency integrated circuits; scalable; transmitter;
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-4435-7
DOI :
10.1109/VLDI-DAT.2013.6533878
