DocumentCode
609807
Title
Process development and characterization of BCB-based redistribution layer (RDL) for silicon interposer application
Author
Sun, Xin ; Cui, Qinghu ; Zhu, Yunhui ; Ma, Shenglin ; Chen, Jing ; Miao, Min ; Jin, Yufeng
Author_Institution
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, #5, Yiheyuan Road, Haidian District, Beijing 100871, China
fYear
2012
fDate
17-20 Sept. 2012
Firstpage
1
Lastpage
4
Abstract
Redistribution layer (RDL) is necessary for electric interconnection of TSV-based 3D stacking applications. Fabrication process and electrical measurement of RDL using benzocyclobutene(BCB) as interlayer dielectric is investigated in this paper. Photosensitive BCB and electroplating copper are applied in this process featured with low temperature below 250. Multilayered RDL has been fabricated by repeating BCB spin-coating and Cu electroplating. Both DC and high frequency test of RDL are carried out. Furthermore, SPICE-compatible distributed RLCG parameter model of RDL is derived to be applied in silicon interposer design.
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System-Integration Technology Conference (ESTC), 2012 4th
Conference_Location
Amsterdam, Netherlands
Print_ISBN
978-1-4673-4645-0
Type
conf
DOI
10.1109/ESTC.2012.6542148
Filename
6542148
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