Strain and Conduction-Band Offset in Narrow n-type FinFETs

Author

Van Hemert, Tom ; Kaleli, Buket ; Hueting, Raymond J. E. ; Esseni, David ; van Dal, M.J.H. ; Schmitz, Jurriaan

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

Volume

60

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

1005

Lastpage

1010

Abstract

In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account both strain and quantum confinement. We estimate the complete strain tensor for the scarce strain measurement points available with finite-element-method simulations of the thermal expansion effect. We found an inhomogeneous compressive strain that increases for smaller fin widths. The experimental CB offset is extracted from temperature-dependent transfer characteristics. The results show a lowering of the CB edge up to 40 meV for fin widths down to 5 nm. These experimental observations compare well with the model, and hence, the band offset can be explained by both quantum confinement and strain.

Keywords

MOSFET; conduction bands; finite element analysis; semiconductor device models; strain measurement; thermal expansion; [010]-oriented narrow n-type FinFET; [110]-oriented narrow n-type FinFET; conduction-band offset; finite element method simulations; inhomogeneous compressive strain; quantum confinement; scarce strain measurement points; strain confinement; strain offset; strain tensor; temperature-dependent transfer characteristics; thermal expansion effect; FinFETs; Logic gates; Semiconductor device measurement; Silicon; Strain; Strain measurement; Temperature measurement; Double-gate FETs; leakage current; quantum wells; semiconductor device measurement; strain; stress; thermal expansion;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2241765

Filename

6464553