• DocumentCode
    610464
  • Title

    High temperature AlGaN/GaN HFET microwave characterization and modeling

  • Author

    Tomaska, M.

  • Author_Institution
    Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
  • fYear
    2013
  • fDate
    17-18 April 2013
  • Firstpage
    125
  • Lastpage
    127
  • Abstract
    The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. S-parameters were on-wafer measured in frequency range up to 40 GHz in wide bias point settings as well as microwave parameters fT and fmax were measured and visualized in the temperature range from room temperature up to 425°C. Significant influence of temperature on microwave properties was observed.
  • Keywords
    III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT devices; S-parameters; high temperature on-wafer microwave characterization setup; wide bias point settings; Aluminum gallium nitride; Gallium nitride; HEMTs; Microwave circuits; Microwave devices; Microwave measurement; Temperature measurement; AlGaN/GaN; HEMT; S-parameters; high temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Techniques (COMITE), 2013l Conference on
  • Conference_Location
    Pardubice
  • Print_ISBN
    978-1-4673-5512-4
  • Type

    conf

  • DOI
    10.1109/COMITE.2013.6545055
  • Filename
    6545055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610464