Ultra-low-power switching and complementary resistive switching RRAM by single-stack metal-oxide dielectric

Author

Tsai, C.Y. ; Huang, Kai C. ; Ting, Y.W. ; Liao, Y.W. ; Chang, C.Y. ; Yang, Jie J. ; Lai, P.Y. ; Chen, H.W. ; Tang, B.T. ; Chang, Y.W. ; Hsieh, C.P. ; Huang, W.C. ; Lin, Y.H. ; Tu, K.C. ; Hsu, C.Y. ; Liu, S.C. ; Chen, J.J. ; Chu, W.T. ; Tsai, C.Y. ; Shiu,

Author_Institution

Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

This paper reports a metal-oxide RRAM with novel Defect Engineering Technology (DET) that achieves forming-free, multi-level capable, self-rectifying, large 2×10⁴ resistance window, ultra-low 0.24nW reset power and good endurance of 10p⁶ cycles at the same time. Besides, by the same DET with additional forming process, we demonstrate a complementary resistive switching (CRS) on single-stack metal-oxide with large 15X resistance window, good endurance of 10⁵ cycles and stable high-temperature disturbance.

Keywords

random-access storage; complementary resistive switching RRAM; defect engineering technology; metal oxide RRAM; resistance window; single stack metal oxide dielectric; single tack metal oxide; stable high temperature disturbance; ultra low power switching; Dielectrics; Hafnium compounds; Manufacturing; Resistance; Stress; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545580

Filename

6545580