Title :
Sub-10nm 1T-1R cell design using HfOx based ReRAM cell
Author :
Jinwoo Noh ; Minseok Jo ; Chang Yong Kang ; Gilmer, D. ; Kirsch, P. ; Jammy, R. ; Lee, Jong Chul ; Byoung Hun Lee
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
The operation properties of ReRAM for 1T1R structure are simulated using semi-empirical circuit model. From the simulation result, it has been found that the operation of 1T1R structure is seriously affected by various parasitics and the performance of access transistor. For sensing operation, a read circuit using constant current source provided better stability than constant voltage source usually used for charge-based memory device.
Keywords :
constant current sources; hafnium compounds; random-access storage; 1T1R cell design; 1T1R structure; HfOx; ReRAM cell; access transistor; charge-based memory device; constant current source; read circuit; resistive random access memory; semiempirical circuit model; stability; Clocks; Delays; Integrated circuit modeling; Random access memory; Resistance; Simulation; Transistors;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545581
