Title :
Microscopic model for the kinetics of the reset process in HfO2 RRAM
Author :
Kalantarian, A. ; Bersuker, Gennadi ; Butcher, B. ; Gilmer, D.C. ; Privitera, S. ; Lombardo, Salvatore ; Geer, R. ; Nishi, Yoshio ; Kirsch, P. ; Jammy, R.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
A detailed model for the reset process kinetics in HfO2-based RRAM is presented describing the transition between low and high resistance states at the atomic level. Based on the filament characteristics as observed by TEM, the kinetics of the reset operation is simulated using the Time Dependent Monte Carlo (TDMC) method incorporating ab-initio calculated microscopic characteristics of the oxygen ions in hafnia. Temperature and field driven oxygen diffusion in the oxide surrounding the filament is shown to provide the needed supply of oxygen to re-oxidize the tip of the filament and switch the device to the High Resistance State (HRS).
Keywords :
Monte Carlo methods; hafnium compounds; oxygen; random-access storage; transmission electron microscopy; HfO2; RRAM; TDMC; TEM; atomic level; high resistance state; microscopic model; oxygen diffusion; reset process kinetics; resistive random access memory; time dependent Monte Carlo method; transmission electron microscopy; Electric fields; Hafnium compounds; Ions; Kinetic theory; Mathematical model; Resistance;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545582
