Improved resistive switching memory performance using novel W/TaOx/TiOxN/TiN structure

Author

Prakash, Aravind ; Maikap, S. ; Chen, W.S. ; Lee, H.Y. ; Chen, F.T. ; Kao, M.-J. ; Tsai, M.-J.

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ. (CGU), Taoyuan, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

Improved resistive switching memory characteristics in a novel W/TaO_x/TiO_xN/TiN device with a small current compliance of 50 μA have been investigated. Memory device has shown consecutive repeatable resistive switching cycles (>10²) with small operation voltage of ±1.5V. The device with TaO_x/TiO_xN shows improved resistance ratio of ~40 as compared to TiO_xN device (~7). The switching mechanism is attributed to the formation/dissolution of O_xygen vacancy filament. The memory device has shown good read endurance of >7.5×10⁵ cycles and excellent data retention of >5 hours at 85°C.

Keywords

CMOS memory circuits; electric resistance; random-access storage; tantalum compounds; titanium compounds; tungsten compounds; CMOS; W-TaO_x-TiO_xN-TiN; current 50 muA; current compliance; data retention; memory device; oxygen vacancy filament; read endurance; repeatable resistive switching cycle; resistance ratio; resistive switching memory characteristics; resistive switching memory performance; switching mechanism; temperature 85 C; Educational institutions; Electrodes; Films; Nonvolatile memory; Resistance; Switches; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545583

Filename

6545583