Good memory performance and coexistence of bipolar and unipolar resistive switching for CMOS compatible Ti/HfOx/W memory

Author

Kan-Hsueh Tsai ; Pang-Shiu Chen ; Tai-Yuan Wu ; Yu-Sheng Chen ; Heng-Yuan Lee ; Wei-Su Chen ; Chen-Han Tsai ; Pei-Yi Gu ; Rahaman, S.Z. ; Yu-De Lin ; Chen, Fan ; Ming-Jinn Tsai ; Tzu-Kun Ku

Author_Institution

Electron. & Optoelectron. Res. Lab., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

The HfO_x device with CMOS compatible W BE is successfully demonstrated. The devices exhibit the low V_FORM and good switching performance. The coexistence of bipolar and unipolar switching for the Ti/HfO_x/W device is presented. The current reduction of bipolar and unipolar operation is by the decrease of compliance current and cell size, respectively.

Keywords

CMOS integrated circuits; bipolar integrated circuits; hafnium compounds; semiconductor storage; switching circuits; titanium; tungsten; CMOS compatible; bipolar resistive switching; coexistence; good memory performance; unipolar resistive switching; CMOS integrated circuits; Electrodes; Hafnium oxide; Resistance; Switches; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545584

Filename

6545584