Title :
Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM
Author :
Chen, Bing ; Kang, J.F. ; Huang, Pei-Yu ; Deng, Y.X. ; Gao, Bingzhao ; Liu, Richard ; Zhang, F.F. ; Liu, L.F. ; Liu, X.Y. ; Tran, X.A. ; Yu, H.Y.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
For the first time, we report that the resistive switching behaviors of the multi-level resistance states can be influenced by the operation mode. Simulations reveal that this is due to the different geometry of the conductive filament in the multi-level resistance states stemmed from the different operation mode. Based on this understanding, improved stability and uniformity of the medium resistance states during switching process are predicted and experimentally verified.
Keywords :
correlation methods; random-access storage; transition metal compounds; TMO-RRAM; conductive filament; correlation method; microscopic filament geometry; multilevel resistive switching characteristics; Electrical resistance measurement; Geometry; Microscopy; Resistance; Switches; Temperature measurement; Voltage measurement;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545591
