DocumentCode :
610579
Title :
Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd2O3 nanocrystals
Author :
Jer-Chyi Wang ; Chih-Ting Lin ; Po-Wei Huang ; Li-Chun Chang ; Chao-Sung Lai
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
2
Abstract :
Ultra-fast (μsec) and disturb-free multilevel flash memory was demonstrated by a novel gold and gadolinium oxide bi-nanocrystals (BNCs). Through nanocrystal band engineering design and using a new operation scheme, the BNCs memory exhibits an ultra-fast program and erase speed for 3.5μsec and 5μsec respectively, which is three orders faster than the conventional one. A disturb-free behavior is achieved for operating under -14 to 9 V. The threshold voltage memory window (2.78 V for 4 bits) closure is only 7.3% under 108 cycling and with only 10% charge loss for 104 sec retention. The activation energy of charge loss and trapped charge centroid were extracted to identify the nanocrystal band engineering and carrier injection mechanism.
Keywords :
charge injection; flash memories; gadolinium compounds; gold; integrated circuit design; nanostructured materials; Au; BNC memory; Gd2O3; activation energy; carrier injection mechanism; charge loss; disturb-free behavior; disturb-free multilevel flash memory; double embedded nanocrystals; gadolinium oxide binanocrystals; multilevel ultra-fast flash memory; nanocrystal band engineering design; storage capacity 14 bit; threshold voltage memory window; time 3.5 mus; time 5 mus; trapped charge centroid; voltage -14 V to 9 V; Annealing; Charge carrier processes; Flash memories; Gold; Hafnium compounds; Logic gates; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
Type :
conf
DOI :
10.1109/VLSI-TSA.2013.6545593
Filename :
6545593
Link To Document :
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