Investigations on the gate oxide dependence of AC RTN characteristics in nanoscaled MOSFETs: SiON vs. HfO2

Author

Nanbo Gong ; Yingxin Qiu ; Runsheng Wang ; Jibin Zou ; Changze Liu ; Ru Huang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

Recent experimental results showed frequency dependence of AC RTN statistics, which cannot be explained by basic nonradiative multiphonon (NMP) model. Therefore, we proposed an improved model to explain this AC effect. Since SiON and HfO₂ have different material properties, we believe different gate oxide will influence AC RTN statistics as well. In this paper, we utilize the proposed model on different material and investigated the influence of various parameters on frequency dependence, including material property, gate voltage, and temperature. The results provide support for the improved NMP model and are beneficial for understanding AC RTN in nannoscaled devices as well as future circuit design against RTN.

Keywords

MOSFET; hafnium compounds; nanostructured materials; random noise; semiconductor device models; silicon compounds; AC RTN characteristics; AC RTN statistics; AC effect; HfO₂; NMP model; SiON; circuit design; frequency dependence; gate oxide dependence; gate voltage; material property; nanoscaled MOSFET; nanoscaled devices; nonradiative multiphonon model; temperature; Data models; Frequency dependence; Hafnium compounds; Logic gates; Material properties; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545597

Filename

6545597