EUV degradation of high performance Ge MOSFETs

Author

Chen, Y.-T. ; Chang, Hsie-Chia ; Wong, I.-S. ; Lin, Chih-Ming ; Sun, H.-C. ; Ciou, H.-J. ; Yeh, W.-T. ; Lo, S.-J. ; Liu, C.W. ; Chenming Hu ; Fu-Liang Yang

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

High energy 13.5 nm EUV (~92 eV) induced Ge MOSFET degradation is reportedly for the first time. The degradation of threshold voltage, subthreshold swing, and channel mobility is attributed to the generation of interface traps and oxide fixed charges. Much more severe degradation of S.S. on nFETs as compared to pFETs suggests that acceptor type D_it in the upper half of Ge bandgap are generated by EUV radiation. ΔQ_it may originate from the dangling bonds at interface. Positive ΔQ_f is due to the fixed charges of oxygen vacancy. The generation of bulk defects in Ge increases the drain leakage current, leading to the reduction of current on/off ratio.

Keywords

MOSFET; germanium; leakage currents; ultraviolet lithography; EUV degradation; EUV radiation; Ge; Ge MOSFET degradation; Ge bandgap; bulk defect; channel mobility; drain leakage current; interface trap; nFET; oxygen vacancy; pFET; subthreshold swing; threshold voltage; wavelength 13.5 nm; Degradation; Junctions; Leakage currents; Logic gates; MOSFET; Photonic band gap; Radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545603

Filename

6545603