(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs

Author

Chunlei Zhan ; Wei Wang ; Xiao Gong ; Pengfei Guo ; Bin Liu ; Yue Yang ; Genquan Han ; Yee-Chia Yeo

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

We report the first demonstration of germanium-tin (GeSn) p-channel MOSFETs fabricated on the (110) surface. A gate-last process was used for transistor fabrication. 8 nm of high quality GeSn film was epitaxially grown on Ge (110) substrate. A low temperature disilane (Si₂H₆) treatment was employed to passivate the GeSn surface prior to TaN/HfO₂ gate stack formation. Subthreshold swing S of 113 mV/decade was achieved, the lowest reported for GeSn pMOSFETs.

Keywords

MOSFET; germanium compounds; molecular beam epitaxial growth; semiconductor thin films; silicon compounds; tantalum compounds; GeSn; Si₂H₆; TaN-HfO₂; epitaxial growth; gate last process; gate stack formation; low temperature disilane treatment; p-channel MOSFET; size 8 nm; subthreshold swing; transistor fabrication; Films; Junctions; Logic gates; MOSFET; MOSFET circuits; Passivation; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545607

Filename

6545607