Device scalability and electrical properties of ALD HfZrO2 with optimum plasma nitridation technique: A study of depth profiles by maximum entropy finite element model and gate stack sub-band gap extraction

Author

Chiang, C.K. ; Chang, J.C. ; Lin, G.P. ; Chin, Y.L. ; Chen, W.J. ; Yang, Cary Y. ; Wei, C.H. ; Chan, Mei-Lin ; Yang, C.L. ; Wu, J.Y.

Author_Institution

United Microelectron. Corp., Hsinchu, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

In this work, we compared the decouple plasma nitridation (DPN) and post nitridation anneal (PNA) processes for equivalent oxide thickness (EOT) scaling of ALD hafnium zirconate (HfZrO₂) gate dielectric. Detailed physical, optical and MOSCAP electrical characteristics of HfZrON film were studied. It is found that DPN power parameter tuning could yield a more densified HfZrO₂/SiO₂ gate stack as compared to DPN pressure and PNA temperature process capability. Higher PNA temperature will cause the nitrogen tail diffuses throughout the HfZrO₂/SiO₂ gate stack and moves into the SiO₂/Si substrate interface, more defects are shown in the SiO₂/Si interfacial sub-band gap.

Keywords

MOS capacitors; annealing; diffusion; electrical conductivity; energy gap; finite element analysis; hafnium compounds; high-k dielectric thin films; maximum entropy methods; nitridation; plasma materials processing; silicon compounds; ALD; DPN power parameter tuning; DPN pressure; EOT scaling; HfZrO₂-SiO₂-Si; MOSCAP electrical characteristics; PNA processes; PNA temperature process capability; decouple plasma nitridation; depth profiles; device scalability; electrical properties; equivalent oxide thickness scaling; gate dielectric; gate stack subband gap extraction; interfacial subband gap; maximum entropy finite element model; nitrogen tail; optical characteristics; optimum plasma nitridation technique; physical characteristics; post nitridation anneal processes; substrate interface; High K dielectric materials; Logic gates; Nitrogen; Plasma temperature; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545612

Filename

6545612