• DocumentCode
    610600
  • Title

    Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric

  • Author

    Li-Jung Liu ; Kuei-Shu Chang-Liao ; Chung-Hao Fu ; Ting-Ching Chen ; Jen-Wei Cheng ; Chen-Chien Li ; Chun-Chang Lu ; Tien-Ko Wang

  • Author_Institution
    Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The TaN/HfON/GeO2/n-Ge pMOSFETs were fabricated with different formation processes of GeO2 interfacial layer. Ultra low EOT of around 0.5 nm is achieved using GeO2 grown by H2O plasma together with in-situ grown HfON gate dielectric, and simultaneously the peak hole mobility of Ge pMOSFET is 312 cm2/V*s.
  • Keywords
    MOSFET; germanium; germanium compounds; hafnium compounds; semiconductor device manufacture; tantalum compounds; EOT; H2O; TaN-HfON-GeO2-Ge; gate dielectric; interfacial layer; pMOSFET; plasma grown; Chemicals; Hafnium compounds; MOSFET; Oxidation; Plasmas; Water;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-3081-7
  • Electronic_ISBN
    978-1-4673-6422-5
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2013.6545614
  • Filename
    6545614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610600