Title :
Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric
Author :
Li-Jung Liu ; Kuei-Shu Chang-Liao ; Chung-Hao Fu ; Ting-Ching Chen ; Jen-Wei Cheng ; Chen-Chien Li ; Chun-Chang Lu ; Tien-Ko Wang
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The TaN/HfON/GeO2/n-Ge pMOSFETs were fabricated with different formation processes of GeO2 interfacial layer. Ultra low EOT of around 0.5 nm is achieved using GeO2 grown by H2O plasma together with in-situ grown HfON gate dielectric, and simultaneously the peak hole mobility of Ge pMOSFET is 312 cm2/V*s.
Keywords :
MOSFET; germanium; germanium compounds; hafnium compounds; semiconductor device manufacture; tantalum compounds; EOT; H2O; TaN-HfON-GeO2-Ge; gate dielectric; interfacial layer; pMOSFET; plasma grown; Chemicals; Hafnium compounds; MOSFET; Oxidation; Plasmas; Water;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545614
