DocumentCode
610605
Title
Co-sputtered Cu/Ti bonded interconnects for 3D integration applications
Author
Hsiao-Yu Chen ; Sheng-Yao Hsu ; Kuan-Neng Chen
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2013
fDate
22-24 April 2013
Firstpage
1
Lastpage
2
Abstract
Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.
Keywords
copper alloys; electromigration; integrated circuit bonding; integrated circuit interconnections; sputtering; three-dimensional integrated circuits; titanium alloys; 3D integration applications; Cu-Ti; cosputtered bonded interconnect; high electrical stability; self-formed adhesion layer; Adhesives; Annealing; Metals; Substrates; Three-dimensional displays; 3D integration; co-sputtered metal bonding; self-formed adhesion layer;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4673-3081-7
Electronic_ISBN
978-1-4673-6422-5
Type
conf
DOI
10.1109/VLSI-TSA.2013.6545619
Filename
6545619
Link To Document