Short channel poly-Ge junction-less p-type FinFETs for BEOL transistors

Author

Kamimuta, Y. ; Ikeda, Ken-ichi ; Furuse, Kazutaka ; Irisawa, T. ; Tezuka, Taro

Author_Institution

Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

Short channel poly-Ge JL FinFETs for BEOL-Trs were demonstrated for the first time. The I_on/I_off ratio of 10⁴ was obtained by thinning W_Fin to 10 nm. I_on of the short channel poly-Ge JL FinFETs reached to 1/2~1/3 of those of crystalline Si pFETs. It was shown that reduction of the parasitic resistance and improvement of channel mobility allows further performance enhancements. Poly-Ge JL FinFET is promising for BEOL-Trs in terms of the current drivability, although the cut-off characteristics should be more improved.

Keywords

MOSFET; electric resistance; elemental semiconductors; germanium; semiconductor junctions; silicon; BEOL transistor; Ge; Si; channel mobility; crystalline pFET; current drivability; cut-off characteristics; parasitic resistance reduction; short channel poly-Ge JL FinFET; short channel poly-Ge junction-less p-type FinFET; Fabrication; FinFETs; Logic gates; Performance evaluation; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545620

Filename

6545620