Short channel poly-Ge junction-less p-type FinFETs for BEOL transistors

Short channel poly-Ge JL FinFETs for BEOL-Trs were demonstrated for the first time. The I_on/I_off ratio of 10⁴ was obtained by thinning W_Fin to 10 nm. I_on of the short channel poly-Ge JL FinFETs reached to 1/2~1/3 of those of crystalline Si pFETs. It was shown that reduction of the parasitic resistance and improvement of channel mobility allows further performance enhancements. Poly-Ge JL FinFET is promising for BEOL-Trs in terms of the current drivability, although the cut-off characteristics should be more improved.