Author_Institution :
TCAD Div., TSMC, Hsinchu, Taiwan
Abstract :
After having been considered “exotic devices”, multigate 3D transistor such as FinFETs, trigate FETs or Gate-all-Around nanowire FETs have become an industrial reality. The excellent electrostatic control of the channel region by the multigate architecture allows one to reduce short-channel effects well below the 20nm node and have the potential to extend Moore´s law down to a gate length of 3nm.
Keywords :
MOSFET; nanowires; FinFET; Moore law; channel region; electrostatic control; exotic devices; gate-all-around nanowire FET; multigate 3D transistor; multigate architecture; short channel effects; size 3 nm; trigate FET; Electrostatics; Logic gates; MOSFET; Nanoscale devices; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545628
