DocumentCode
610615
Title
Low temperature FDSOI devices, a key enabling technology for 3D sequential integration
Author
Batude, P. ; Sklenard, B. ; Xu, Changsheng ; Previtali, B. ; De Salvo, B. ; Vinet, M.
Author_Institution
CEA-leti, Minatec, Grenoble, France
fYear
2013
fDate
22-24 April 2013
Firstpage
1
Lastpage
4
Abstract
Processing a high performance transistor at temperature lower than 650°C is the main challenge of 3D sequential integration. This paper shows how FDSOI architecture enables to overcome the issues observed in bulk devices, i.e: higher junction leakage and deactivation and allow performance matching of low temperature devices with their high temperature counterparts.
Keywords
sequential circuits; silicon-on-insulator; three-dimensional integrated circuits; transistor circuits; 3D sequential integration; high performance transistor; low temperature FDSOI devices; silicon-on-insulator; temperature 650 C; Annealing; Films; Junctions; Performance evaluation; Silicon; Three-dimensional displays; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4673-3081-7
Electronic_ISBN
978-1-4673-6422-5
Type
conf
DOI
10.1109/VLSI-TSA.2013.6545629
Filename
6545629
Link To Document