Laser anneal assisted contact resistivity reduction with post-silicide implantation for 14nm node and beyond

The continuing reduction of contact resistivity (ρ_C) is a critical challenge for device performance. In this paper the ρ_C reduction for n-SD (source/drain) is demonstrated using post-silicide implantation of Se or P into Ni(Pt) silicide, with various energies/doses and laser anneal conditions. The improvement of ρ_C is achieved without sacrificing junction integrity/leakage. Hence laser assisted post-silicide implantation can be a key enabler to realize low silicide contact for n-SD for the 14 nm node and beyond.