Title :
Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects
Author :
Mizubayashi, W. ; Fukuda, Kenji ; Mori, Takayoshi ; Endo, Kazuhiro ; Liu, Y.X. ; Matsukawa, T. ; O´uchi, S. ; Ishikawa, Yozo ; Migita, S. ; Morita, Yusuke ; Tanabe, A. ; Tsukada, J. ; Yamauchi, Hiroyuki ; Masahara, M. ; Ota, Hiroyuki
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We analyzed the threshold voltage (Vth) shift due to EOT scaling in double gate (DG) tunnel FinFETs (tFinFETs). It is found that Vth in tFinFETs has high sensitivity of EOT, which is quite different as compared with MOSFETs. We proposed a simple model which is indispensable to design the tFinFETs structure for the first time. In order to correct the Vth modulation due to EOT scaling in tFinFETs, we studied the back gate effect in independent-DG tFinFETs and revealed that the back bias is effective as is the case in the MOSFETs.
Keywords :
MOSFET; dielectric materials; electrostatics; EOT scaling; MOSFET; back gate effects; double gate tunnel FinFET; electrostatics; gate dielectrics; tFinFETs structure; threshold voltage shifts; Data models; Electric potential; FinFETs; Logic gates; Sensitivity; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545646
