Title :
Random interface trap induced fluctuation in 22nm high-k/metal gate junctionless and inversion-mode FinFETs
Author :
Yijiao Wang ; Kangliang Wei ; Xiaoyan Liu ; Gang Du ; Jinfeng Kang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The impact of random interface trap (RIT) on the junctionless MOSFET (JL-FET) is investigated. Both acceptor-like and donor-like interface traps are considered to 22nm high-k metal gate (HKMG) junctionless structure and traditional inversion-mode FinFET. Fluctuations in threshold voltage, on current, leakage current, drain induced barrier lowering and subthreshold swing are analyzed. The results show that the position effect and type of interface traps (ITs) can induce different fluctuation for JL-FET and FinFET.
Keywords :
MOSFET; fluctuations; interface states; FinFET; JL-FET; MOSFET; acceptor-like interface traps; donor-like interface traps; drain induced barrier lowering; high-k metal gate junctionless structure; leakage current; on current; random interface trap; size 22 nm; subthreshold swing; threshold voltage; Doping; Electron traps; FinFETs; Fluctuations; Leakage currents; Logic gates; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545647
