Title :
Is the bulk vs. SOI battle over?
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
Following Intel´s lead in the 22nm technology, it seems that the industry has decided that the junction-isolated FinFET on bulk is the dominant technology for the next two nodes, namely 14 and 10nm. In this talk, we will examine the reasoning behind such decision and evaluate the likelihood of alternative solutions such as dielectrically-isolated FinFET and FDSOI/UTBB for a broad spectrum of high volume products driving the semiconductor industry.
Keywords :
MOSFET; semiconductor junctions; silicon; silicon-on-insulator; FDSOI/UTBB; Si; dielectrically-isolated FinFET; high volume product; junction-isolated FinFET; semiconductor industry; size 10 nm; size 14 nm; size 22 nm; Computer architecture; FinFETs; Logic gates; Low-power electronics; Silicon; Substrates; System-on-chip;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545649
