Title :
Polarization-doped InGaN based blue light-emitting diode with reduced efficiency droop
Author :
Adhikari, Sulav ; Pal, Shovon ; Dhanavantri, C.
Author_Institution :
Optoelectron. Devices Group, Central Electron. Eng. Res. Inst. (CEERI), Pilani, India
Abstract :
GaN/InGaN based light-emitting diode (LED) is designed exploiting the recently-discovered polarization-induced doping phenomena in III-nitride semiconductors. LED structure employing InGaN barrier, combined with the polarization-induced doped electron-blocking layer (EBL) shows promising results.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light polarisation; optical design techniques; semiconductor doping; wide band gap semiconductors; EBL; GaN-InGaN; III-nitride semiconductors; LED structure; polarization-doped InGaN based blue light-emitting diode; polarization-induced doped electron-blocking layer; polarization-induced doping phenomena; reduced efficiency droop;
Conference_Titel :
Fiber Optics and Photonics (PHOTONICS), 2012 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-4718-1
