Title :
Keynote: Variation-tolerant adaptive and resilient designs in nanoscale CMOS
Author_Institution :
Intel Corporation, Hillsboro, OR, USA
Abstract :
Summary form only given, as follows. Process, voltage and temperature (PVT) variations pose major challenges to achieving energy-efficient performance in multi-core & many-core processors and SoC designs in nanoscale CMOS. Aging-induced transistor and interconnect degradations limit power and performance. Impacts of variations and aging are further aggravated in the Near-Threshold Voltage (NTV) operating regime where energy efficiency peaks. Interconnect delays are becoming bottlenecks to efficient global communications across the die. We will discuss variation-tolerant logic and memory design techniques that enable robust operation in nanoscale CMOS. We will present voltage-frequency adaptation and resiliency schemes that can mitigate impacts of dynamic variations and aging. Many-core processor designs that use a mesochronous Network-on-Chip (NoC) mesh to overcome clock distribution and global interconnect challenges will be presented. Opportunities offered by fully asynchronous designs to further improve tolerance to extreme variations will be discussed.
Conference_Titel :
Asynchronous Circuits and Systems (ASYNC), 2013 IEEE 19th International Symposium on
Conference_Location :
Santa Monica, CA, USA
Print_ISBN :
978-1-4673-5956-6
DOI :
10.1109/ASYNC.2013.35