Design of a FinFET based inverter using MTCMOS and SVL leakage reduction technique

Scaling of the Standard single-gate bulk MOSFETs faces great challenges in the nanometer regime due to the severe short-channel effects that cause an exponential increase in the leakage current and enhanced sensitivity to process variations. Double-gate FinFET has better SCEs performance compared to the conventional CMOS and stimulates technology scaling because of the self-alignment of the two gates. In this paper, we describe different mode of FinFET technology and performed the comparative analysis of stand-by leakage (when the circuit is idle), delay and the total power of the logic circuit, on Cadence Virtuoso tool at 45nm By applying MTCMOS and SVL are effective circuit-level techniques and that provides a high performance and low power design by utilizing both low and high-threshold voltage transistor. The leakage power of the FinFETs based inverter using SVL technique is 50-60% lower than the normal FinFETs based inverter and the total power consumption of FinFETs based inverter using MTCMOS technique is 65-70% lower than the normal FinFETs based inverter.