Comparative study of Double Gate SOI FinFET and trigate Bulk MOSFET structures

The impact of systematic variations on transistor performance is shown for the trigate Bulk MOSFET and Double Gate SOI FinFET. This paper compares the variations in threshold voltage, subthreshold swing and drain induced barrier lowering (DIBL) by varying physical dimensions (gate oxide thickness, channel width and channel length) of the devices mentioned above. It also compares the temperature profile of the devices along the channel length. The electrical characteristics and temperature profile of the devices were simulated with the help of Sentaurus TCAD. The results obtained from the simulation reveal that trigate bulk MOSFET is more scalable than double gate SOI FinFET and can be used for better yield and reliability.