DocumentCode :
612429
Title :
Design and analysis of a low actuation voltage electrowetting-on-dielectric device
Author :
Samad, M.F. ; Kouzani, Abbas Z. ; Samad, M.
Author_Institution :
Sch. of Eng., Deakin Univ., Waurn ponds, VIC, Australia
fYear :
2013
fDate :
25-28 May 2013
Firstpage :
513
Lastpage :
517
Abstract :
This paper presents an Electrowetting-on-Dielectric (EWOD) device with optimized insulating layers operated by low actuation voltage. The device consists of an electrode array on a silicon substrate, covered by a dielectric layer and a hydrophobic layer. To characterize the performance of the device, simulations are performed for the dielectric layer of Sio2 and the hydrophobic layer of Sio2, Su-8 and Parylene C at different voltages. The volume finite difference approach of the Coventorware software was used to carry out the simulations. Two different molar of di-ionized water droplet were considered in the simulations. It was observed that the device having the Sio2 dielectric layer and the Parylene C hydrophobic layer moved the 1M KCL (potassium chloride) droplet at the actuation voltage of 25V.
Keywords :
dielectric devices; drops; electrodes; finite difference methods; hydrophilicity; microfluidics; silicon compounds; wetting; Coventorware software; EWOD device; KCl; Parylene C hydrophobic layer; SiO2; Su-8; device performance; dielectric layer; diionized water droplet; electrode array; electrowetting-on-dielectric device design; low actuation voltage; molar; optimized insulating layer; potassium chloride droplet; silicon substrate; voltage 25 V; volume finite difference; Aluminum; Arrays; Dielectrics; Electrodes; Media; Surface tension; 1M KCL; Actuation voltage; Dielectric layer; Electrowetting-on-dielectric; Hydrophobic layer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Complex Medical Engineering (CME), 2013 ICME International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-2970-5
Type :
conf
DOI :
10.1109/ICCME.2013.6548303
Filename :
6548303
Link To Document :
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