DocumentCode
612999
Title
Contactless test access mechanism for TSV based 3D ICs
Author
Rashidzadeh, R.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
fYear
2013
fDate
April 29 2013-May 2 2013
Firstpage
1
Lastpage
6
Abstract
In this paper, three coupling techniques for contactless TSV probing have been presented and their advantages and disadvantages are discussed. A contactless, noninvasive TSV probing scheme based on the principle of capacitive coupling is designed and simulated. The implemented scheme supports the high-density and the tight-pitch requirements for TSV probing.
Keywords
circuit simulation; coupled circuits; integrated circuit design; integrated circuit testing; probes; three-dimensional integrated circuits; 3D IC; capacitive coupling technique; contactless noninvasive TSV probing scheme; contactless test access mechanism; high-density requirement; tight-pitch requirement; Capacitance; Couplings; Inductors; Probes; Three-dimensional displays; Through-silicon vias; Transmitting antennas; 3D stacked ICs; contactless probe; coupling techniques; test access mechanism; through silicon via;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium (VTS), 2013 IEEE 31st
Conference_Location
Berkeley, CA
ISSN
1093-0167
Print_ISBN
978-1-4673-5542-1
Type
conf
DOI
10.1109/VTS.2013.6548904
Filename
6548904
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