DocumentCode :
613023
Title :
An iterative diagnosis approach for ECC-based memory repair
Author :
Papavramidou, P. ; Nicolaidis, Michael
fYear :
2013
fDate :
April 29 2013-May 2 2013
Firstpage :
1
Lastpage :
6
Abstract :
In modern SoCs embedded memories should be repaired to achieve acceptable yield. They should also be protected by ECC against field failures to achieve acceptable reliability. In technologies affected by high defect densities, conventional repair induce very high costs. To reduce them, we can use ECC to fix words comprising a single faulty cell and repair to fix all other faulty words. However it was shown that, for high defect densities, the diagnosis required for ECC-based repair may induce very large cost. In previous work this issue was fixed by means of new memory test algorithms that exhibit the so-called “single-read double-fault detection” property. As these algorithms are complex and increase test length, we explore a new iterative diagnosis approach, which provides tradeoffs in terms of hardware cost and test length.
Keywords :
failure analysis; integrated circuit reliability; integrated circuit testing; iterative methods; random-access storage; system-on-chip; ECC-based memory repair; error-correcting code memory-based memory repair; faulty words; field failures; hardware cost; high defect densities; iterative diagnosis approach; memory test algorithms; modern SoC embedded memories; reliability; single faulty cell; single faulty repair; single-read double-fault detection property; test length; Circuit faults; Computer aided manufacturing; Error correction codes; Fabrication; Hardware; Maintenance engineering; System-on-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Test Symposium (VTS), 2013 IEEE 31st
Conference_Location :
Berkeley, CA
ISSN :
1093-0167
Print_ISBN :
978-1-4673-5542-1
Type :
conf
DOI :
10.1109/VTS.2013.6548928
Filename :
6548928
Link To Document :
بازگشت