Title :
Direct modulation frequency response of semiconductor ring laser
Author :
Memon, Muhammad Irfan ; Fathallah, Habib ; Li, Bing ; Siyuan Yu ; Mezosi, G. ; Sorel, Marc
Author_Institution :
Prince Sultan Adv. Technol. Res. Inst., King Saud Univ., Riyadh, Saudi Arabia
Abstract :
This paper demonstrates the measurements of direct modulation bandwidth of a bistable racetrack semiconductor ring laser. It is exhibited using the phenomenon of optical injection-locking in the master-slave layout. Semiconductor ring laser is employed as the slave laser. Modulated signal is injected at 1530 nm, which is about 20nm away from the main lasing mode. The frequency response of the main mode is measured, thus the signal is modulated by the SRL cavity. The modulation bandwidth of the SRL is found to be 15 GHz. Furthermore, the proposed method can be recommended for monolithic integration. This scheme can provide a low-cost modulation source for future communication systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; laser modes; laser stability; laser variables measurement; optical bistability; optical modulation; ring lasers; semiconductor lasers; AlGaInAs-InP; SRL; bandwidth 15 GHz; bistable racetrack; direct modulation frequency response; lasing mode; low-cost modulation source; master-slave layout; modulated signal; modulation bandwidth; monolithic integration; optical injection-locking; semiconductor ring laser; wavelength 1530 nm; Frequency response; Nonlinear optics; Optical bistability; Optical modulation; Ring lasers; Semiconductor lasers; Semiconductor ring lasers; frequency response; modulation bandwidth; optical bistability; optical injection locking;
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
Conference_Location :
Fira
Print_ISBN :
978-1-4673-6196-5
Electronic_ISBN :
978-1-4673-6194-1
DOI :
10.1109/SIECPC.2013.6550761