DocumentCode :
614315
Title :
Amorphous metal based nanoelectromechanical switch
Author :
Mayet, Abdulilah ; Smith, Colin ; Hussain, M.M.
Author_Institution :
Integrated Nanotechnol. Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear :
2013
fDate :
27-30 April 2013
Firstpage :
1
Lastpage :
5
Abstract :
Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <;5 volts of actuation voltage (Vpull-in).
Keywords :
nanoelectromechanical devices; nanofabrication; switches; tungsten alloys; amorphous metal; complex digital circuit; dimensional integrity; dual gated NEM switch; fabrication process development; high switching speed; laterally actuated NEM switch; nanoelectromechanical switch; pull-in switch; size 100 nm; tungsten alloy; ultralow voltage switch; Films; Micromechanical devices; Silicon; Switches; Tungsten; Amorphous metal; electron beam lithography; nanoelectromechanical switch; pull-in voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
Conference_Location :
Fira
Print_ISBN :
978-1-4673-6196-5
Electronic_ISBN :
978-1-4673-6194-1
Type :
conf
DOI :
10.1109/SIECPC.2013.6550765
Filename :
6550765
Link To Document :
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