Title :
Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene
Author :
Qaisi, Ramy ; Smith, Colin ; Hussain, M.M.
Author_Institution :
Integrated Nanotechnol. Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis.
Keywords :
Raman spectra; chemical vapour deposition; graphene; multilayers; thin films; transparency; C; Raman spectra; atmospheric pressure chemical vapor deposition based growth; atomic crystal structure material; bilayer graphene film; electrical property analysis; energy harvesting; energy storage; multilayer graphene film; physical characterization; pressure 1 atm; radio frequency circuitry; semimetallic material; time variant layer control; transparent material; Carbon; Chemical vapor deposition; Copper; Glass; Graphene; Optical films; Raman spectroscopy; atmospheric pressure chemical vapor deposition (APCVD); graphene;
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
Conference_Location :
Fira
Print_ISBN :
978-1-4673-6196-5
Electronic_ISBN :
978-1-4673-6194-1
DOI :
10.1109/SIECPC.2013.6550799