• DocumentCode
    614431
  • Title

    Timing yield and reliability improvement of carbon nano-tube FET based digital circuits with statistical driven correlation-aware placement

  • Author

    Jalali, A. ; Pedram, Hossein

  • Author_Institution
    Dept. of Comput. Eng. & Inf. Technol., Amirkabir Univ. of Technol., Tehran, Iran
  • fYear
    2013
  • fDate
    16-19 April 2013
  • Firstpage
    160
  • Lastpage
    164
  • Abstract
    Carbon Nano-tube Field Effect Transistor (CNFET) is one of the most promising successors of CMOS technology because of its superb electrical features. Although these features are proper for implementing in various practical circuits, CNFET-based circuits will encounter enormous fabrication problems due to their size. Two of the most challenging problems are timing yield and reliability reduction. Consequently methods for improving robustness of CNFET-based circuits should be conducted. Considering these problems, in this paper, the statistical model of reliability and timing yield of CNFET-based circuits is presented and then we propose a statistical driven correlation-aware placement for CNFET-based gates. We illustrate that our placement engine improves the reliability and timing yield of various circuits. Following these observations, in our method, a statistical approach is conducted to get optimum timing yield of register-to-register path in a sequential circuit. Subsequently, experimental results show improvement of about 19% in timing yield and 17% in reliability of some ISCAS89 circuits.
  • Keywords
    CMOS integrated circuits; carbon nanotube field effect transistors; semiconductor device reliability; sequential circuits; statistical analysis; CMOS technology; CNFET-based circuits; CNFET-based gates; ISCAS89 circuits; carbon nano-tube field effect transistor; carbon nanotube FET; digital circuits; electrical features; optimum timing yield; placement engine; register-to-register path; reliability improvement; reliability reduction; sequential circuit; statistical approach; statistical driven correlation-aware placement; statistical model; CNTFETs; Integrated circuit modeling; Integrated circuit reliability; Logic gates; Timing; Carbon Nano-tube; Carbon Nano-tube Field Effect Transistor (CNFET); Placement; Reliability; Timing yield;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
  • Conference_Location
    Kiev
  • Print_ISBN
    978-1-4673-4669-6
  • Type

    conf

  • DOI
    10.1109/ELNANO.2013.6552009
  • Filename
    6552009