Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well

Author

Hassan, A.H.A. ; Mironov, O.A. ; Dobbie, A. ; Morris, J.H. ; Gabani, S. ; Feher, A. ; Cizmar, E. ; Andrievskii, V.V. ; Berkutov, I.B.

Author_Institution

Dept. of Phys., Univ. of Warwick Coventry, Coventry, UK

fYear

2013

fDate

16-19 April 2013

Firstpage

51

Lastpage

55

Abstract

In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures. An extremely high hole mobility has observed, along with the lowest value of effective mass to date, using Schubnikov de Haas oscillations for both normal and inverted structures. The channel is confirmed to be pure germanium, with low background impurity scattering that improves the hole transport.

Keywords

Ge-Si alloys; galvanomagnetic effects; hole mobility; impurity scattering; semiconductor quantum wells; two-dimensional hole gas; Schubnikov de Haas oscillations; SiGe; background impurity scattering; effective mass; electrical characterization; hole mobility; hole transport; inverted structures; magneto-transport properties; pure germanium; strained germanium heterostructures; strained quantum well; structural characterization; two dimensional hole gas; Effective mass; Germanium; Lead; Scattering; Silicon; Temperature measurement; 2DHG; Ge/SiGe; Pure Ge; Shubnikov de Haas oscillations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference

Conference_Location

Kiev

Print_ISBN

978-1-4673-4669-6

Type

conf

DOI

10.1109/ELNANO.2013.6552021

Filename

6552021