Development of technology of multicomponent instrument compositions formation on the basis of porous silicon

Author

Ivanovna, Zubko Evgeniya ; Yakovlevich, Shvets Evgenii

Author_Institution

Dept. of Phys. & Biomed. Electron., Zaporozhye State Eng. Acad., Zaporozhye, Ukraine

fYear

2013

fDate

16-19 April 2013

Firstpage

212

Lastpage

216

Abstract

Technological scheme for a formation of electron instrument compositions PcCu /por-Si/n-Si and PcAl/por-Si/n-Si has been developed. The data on the technological adaptation of the deposition and annealing of samples have been given. The effect of annealing for morphological and electrical characteristics of the obtained compositions has been investigated.

Keywords

aluminium compounds; annealing; copper compounds; electrical resistivity; elemental semiconductors; multilayers; organometallic compounds; porous semiconductors; semiconductor-insulator boundaries; silicon; surface morphology; Si; annealing; deposition; electrical properties; morphological properties; multicomponent electron instrument compositions; porous silicon; Annealing; Films; Instruments; Silicon; Substrates; Surface treatment; Temperature; compositions; phthalocyanine; porous silicon; pulverization; structuring; substrates; technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference

Conference_Location

Kiev

Print_ISBN

978-1-4673-4669-6

Type

conf

DOI

10.1109/ELNANO.2013.6552036

Filename

6552036