Title :
The ways of silicon carbide usage in field-emission devices: The technological aspect
Author :
Shelepin, N. ; Matyushkin, I. ; Orlov, S. ; Ermakov, A. ; Svechkarev, K. ; Bobovnikov, P. ; Mikhaylov, A. ; Belov, Anton
Author_Institution :
Lab. of Perspective Technol., JSC Mol. Electron. Res. Inst., Moscow, Russia
Abstract :
In general cold field emission of SiC and other cathodes are compared. Possible applications of SiC for field emission cathodes and some of technological methods are considered. Also our results on the CVD-manufactured P-doped SiC-films are presented. Lastly our results on the ion-synthesized SiC-nanoinclusions in the silicon surface layer are discussed.
Keywords :
cathodes; chemical vapour deposition; elemental semiconductors; silicon; wide band gap semiconductors; CVD; SiC; chemical vapour deposition; field emission cathodes; field-emission devices; Annealing; Carbon dioxide; Cathodes; Films; Silicon; Silicon carbide; CVD; SiC; carbon; field emission; ion implantation;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location :
Kiev
Print_ISBN :
978-1-4673-4669-6
DOI :
10.1109/ELNANO.2013.6552068
