• DocumentCode
    614491
  • Title

    Modeling of electronic radiation influence to transistors

  • Author

    Tuyakbayev, A.A. ; Baizhumanov, M.K. ; Tuyakbaev, D.A.

  • Author_Institution
    Acad. of the Civil Aviation, Almaty, Kazakhstan
  • fYear
    2013
  • fDate
    16-19 April 2013
  • Firstpage
    192
  • Lastpage
    194
  • Abstract
    The paper presents a single-level model to identify the constant of the radiation changes in the lifetime of minority carriers in the base of n-p-n transistors, DLTS spectra base of n-p-n transistors and describes the results.
  • Keywords
    bipolar transistors; radiation effects; semiconductor device models; semiconductor device reliability; semiconductor device testing; DLTS spectra; bipolar transistor; electronic radiation modeling; minority carrier lifetime; n-p-n transistor; radiation change; single-level model; Bipolar transistors; Boron; Charge carriers; Mathematical model; Radiation effects; Silicon; Transistors; DLTS-spectra; bipolar transistors; divacancy; electron irradiation; lifetime; radiation center; radiation effects; recombination component; vacancy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
  • Conference_Location
    Kiev
  • Print_ISBN
    978-1-4673-4669-6
  • Type

    conf

  • DOI
    10.1109/ELNANO.2013.6552069
  • Filename
    6552069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=614491