DocumentCode :
614515
Title :
A 1.2V wideband CMOS mixer with high conversion gain and low flicker noise
Author :
Chao Chen ; Jianhui Wu
Author_Institution :
ASIC Res. Center, Southeast Univ., Nanjing, China
fYear :
2013
fDate :
16-19 April 2013
Firstpage :
405
Lastpage :
408
Abstract :
This paper presents the design of a wideband CMOS mixer (frequency convertor) for direct-conversion receivers. The mixer consists of a transconductance stage, a passive switching stage and a current amplifier. The current amplifier with gm-boosted structure realizes a low input resistance. It absorbs the down-converted IF current at the output node of the switching pair and amplifies it through a current mirror. The low noise characteristic of the current amplifier helps to improve the noise performance of the proposed mixer. In order to improve the power efficiency, current-reusing technique is adopted in the transconductance stage. The proposed mixer is designed in 0.13μm RFCMOS process. Simulation results show a 20dB conversion gain, a 10dB SSB noise figure and a 4.5 dBm IIP3 over the wideband operation frequency band from 1GHz to 3GHz while dissipating 2.5mA under a 1.2V supply voltage.
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF frequency convertors; UHF integrated circuits; UHF mixers; current mirrors; flicker noise; radio receivers; RFCMOS process; UHF integrated circuits; current 2.5 mA; current amplifier; current mirror; current-reusing technique; direct conversion receivers; frequency 1 GHz to 3 GHz; frequency convertors; gain 20 dB; high conversion gain; low flicker noise; noise figure 10 dB; passive switching stage; power efficiency; size 0.13 mum; switching pair; transconductance stage; voltage 1.2 V; wideband CMOS mixer; Mixers; Noise; Noise measurement; Radio frequency; Switches; Transconductance; CMOS frequency convertor; RF; current amplifier; direct-conversion receiver; gm-boosted; mixer; wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location :
Kiev
Print_ISBN :
978-1-4673-4669-6
Type :
conf
DOI :
10.1109/ELNANO.2013.6552093
Filename :
6552093
Link To Document :
بازگشت